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In this letter, we compare three design architectures for quantum dot infrared photodetectors—InGaAs-capped InAs dots, InAs dot-in-a-well (DWELL), and InAs submonolayer (SML) heterostructures—in terms of optical and spectral behavior. The photoluminescence (PL) intensity measured of the SML sample at 8 K was 20 times stronger than that of the other samples, and its full-width at half-maximum value...
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