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K. P. Loh and co‐workers develop a method to synthesize wafer scale, high‐quality, fewlayer, hexagonal boron nitride (h‐BN) films. On page 731, they use a remotely discharged plasma beam source in high vacuum. Lithographic patterning of layer‐by‐layer stacked h‐BN and graphene films enables the fabrication of a (h‐BN‐G)n disk array, which can exhibit tunable plasmonic resonances in the infrared region...
Vertical integration of hexagonal boron nitride (h‐BN) and graphene for the fabrication of vertical field‐effect transistors or tunneling diodes has stimulated intense interest recently due to the enhanced performance offered by combining an ultrathin dielectric with a semi‐metallic system. Wafer scale fabrication and processing of these heterostructures is needed to make large scale integrated circuitry...
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