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The authors have studied advanced MOS structure containing Ru gate electrode, Hf0.75Si0.25Oy dielectric and Si substrate by means of capacitance-voltage characteristics (C-V), X-ray photoelectron spectroscopy (XPS) and reflection electron energy loss spectroscopy (REELS). Using experimental values we have constructed energy band diagram of the Ru/Hf0.75Si0.25/Si gate stack
In this paper we investigate growth of Al2O3 and performance of Al2O3/GaN MOS structures using O2, Ar and NH3 pre-treatment of GaN surface. Rapid thermal annealing (RTA) after the growth is also tested. Current-voltage (I-V) and thermal activation energy measurements were used for characterization of MOS and reference Ni/GaN Schottky contact structures. From the I-V characteristics, reduction of the...
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