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In this work, we investigate the influence of incorporation Zirconia (ZrO2) in gate dielectric HfO2 on electrical properties and the reliability of nMOSFET for the 28nm technology node. Detailed film physical, chemical and optical properties of Hf1−xZrxO2 as a function of Zr content were studied using HRTEM, AR-XPS, spectroscopic ellipsometer. Compared to HfO2, Hf1−xZrxO2 provides lower C-V hysteresis,...
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