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The stability of pc-Si films under long-time illumination was studied. The films were fabricated at low temperature of 250degC by plasma-enhanced chemical vapor deposition technology from SiCl4 /H2. The light soaking for 720 min in vacuum was carried out using white light of an intensity of 100 mW/cm2. The light-induced effects were monitored by measuring the changes in the photoconductivity and dark...
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