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Due to scaling of traditional MOS devices into nanometer range, the constraints like power and performance restrict its lastingness in future circuit design. The trigate FinFET has emanated as propitious device for better electrostatic characteristics in terms of Short Channel Effects (SCEs) etc. In this work, the design and analysis of 5-fin SOI FinFET at 20nm technology has been done using 3 Dimensional...
FinFETs have been the most promising replacement of MOSFETs for nanoscale era. Below 20nm, performance is highly degraded due to severe short channel effects (SCEs). In this paper, the electrical performance of SOI FinFET has been examined at 14nm gate length. Channel material used is SiC-3C because of its high carrier transport. Dual-k spacers are used in the underlap region between gate and source/drain...
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