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A novel high-performance and miniaturized fin-shaped field effect transistor has been proposed which has been named as rectzoidal (rectz) because of its origin from the existing rectangular (rect) and trapezoidal (trap) structures. The rationale behind proposing this structure is to sustain the integration of millions of transistors on integrated circuits (ICs), further utilizing these scaled transistors...
FinFETs have been the most promising replacement of MOSFETs for nanoscale era. Below 20nm, performance is highly degraded due to severe short channel effects (SCEs). In this paper, the electrical performance of SOI FinFET has been examined at 14nm gate length. Channel material used is SiC-3C because of its high carrier transport. Dual-k spacers are used in the underlap region between gate and source/drain...
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