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The growth of Yb on Si(100) from 1 to 12 ML as a function of the annealing temperature has been monitored with low energy electron diffraction (LEED) and the electronic properties were studied by He I photoemission and He metastable deexcitation spectroscopy (MDS). The annealing temperature (ranging from 590°C to 640°C) induces a 3×1 double domain LEED pattern. Correspondingly, a change in the electronic...
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