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The low-frequency (LF) noise of n-MOSFETs with a 1.5nm SiON gate oxide is studied for different gate materials, namely, a polycrystalline (poly) silicon gate, a fully nickelsilicided (FUSI) gate and a NiSi FUSI gate deposited on 10 cycles of HfO 2 . The principal aim is to identify the most likely origin of the predominant 1/f noise in the thin gate oxide devices by investigating the impact...
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