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The Single Event Upsets on deep submicron and nano devices are analyzed. The Single Event Upsets on 0.18μm Static Random Access Memory in space orbits are measured. The measurement results show that the Single Event Upset (SEU) rates of 0.18μm Static Random Access Memory (SRAM) in Low earth orbit (LEO) are about one order of magnitude higher than geosynchronous orbit (GEO). The proton and heavy ion...
The SEU rates of 65nm SRAM and 0.18μm SRAM on orbits are experimentally studied. SEUs are tested with heavy ions, high energy protons and low energy protons by accelerator. The SEU rates induced by heavy ion direct ionizing, proton nuclear reaction and proton direct ionizing on LEO and GEO are calculated respectively based on the experiment data. The results that which factor contributes more to the...
This paper describes an asymmetric 6.4-Gb/s memory interface for a wide range of DIMM configurations for desktop and server applications. The link uses a fly-by quadrature forwarded clock to enable fast startup and power-mode transitions on the DRAM and per-bit timing adjustment on the controller to enable the high-speed signaling. Single-ended low-swing near-ground signaling (NGS) is introduced in...
A memory system that meets the bandwidth, power efficiency, and capacity needs of future computing systems is presented in this paper. A 6.4 Gbps single-ended DDR memory interface for the controller and the DRAM was designed in a 28-nm CMOS process for a main memory system with dual-rank DIMMs. The architecture features a novel clocking scheme, per-pin timing adjustment, dynamic point-to-point signaling...
Phone simulator is a simulation tool running on PC which can test debug phone software. It also provides front graphical user interface (GUI) like the true phone's LCD. Developers can complete the initial development process and test work by phone simulator. This simulator is worked for mobile web application. It is different form traditional phone simulator. Traditional phone simulator only provided...
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