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Three groups of copper films were deposited on the surfaces of the Si (100) crystal by both metal vapor vacuum arc (MEVVA) ion implantation and ion beam assistant deposition (IBAD) technologies. Before coating Cu film by IBAD two groups of the samples were implanted by 68keV Cu ion with fluence of 3×10 17 ions/cm 2 . Different sputtering ion densities and deposition times of IBAD were...
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