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The silicon-containing diamond-like carbon film was deposited by r.f. plasma CVD with reactant gases of CH4, SiH4 and Ar on the substrates of silicon wafer, Corning 7059 glass and Ti–6Al–4V alloy respectively. In this study, the effects of residual stress in the film on adherence and the failure mode of silicon-containing diamond-like carbon film deposited on different substrate materials are investigated...
Silicon (Si) containing diamond-like carbon films are deposited by RF plasma CVD with reactant gases of CH 4 , SiH 4 and Ar. The effects of substrate temperature and RF power on film structure, residual stress and adhesion are studied. The tensile cracking failure mode for films on Corning 7059 glass shows full adherence properties. A structure model is proposed, and the residual stress...
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