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We have developed and demonstrated new techniques for failure analysis based on focused ion beam (FIB) cross-sectioning and inspection by atomic force microscopy (AFM). Normally, inspection after FIB cross-sectioning is done by scanning electron microscopy (SEM). As features of interest shrink below limits detectable by SEM, often the next method chosen is transmission electron microscopy (TEM). However,...
A GaInP/AlGaInP broad-area (60 ? 500 ?m2) laser grown by MOCVD has obtained a very low threshold current density Jth of 1.1 kA/cm2. The dependence of Jth and differential quantum efficiency on cavity length was measured to determine internal quantum efficiency, losses and the gain constant, which were found to be comparable to these characteristics in an AlGaAs laser.
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