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A compact 2 Transistor (2T) radiation sensor with a tunable measurement sensitivity was implemented in a 65nm LP bulk process. Alpha radiation tests show a 117X higher cross-section area per cell for the proposed sensor as compared to a 6T SRAM test structure. The critical Linear Energy Transfer (LET)of the proposed 2T sensor was estimated to be 3.4x–4.2x lowerthan that of an inverter cell or SRAM...
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