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The low-frequency noise (LFN) of a p-type nanowire FET (p-NWFET) was characterized and compared with that of an n-type NWFET (n-NWFET) in terms of dominant noise source and its location in the channel region. An inverse proportional dependence of the noise level on channel diameter was observed in the p-NWFET but not in the n-NWFET. The LFN was observed to be mainly generated by Hooge mobility fluctuation...
Nanowire FETs (NWFETs) having gate-all-around (GAA) structure have been developed due to their novel short channel effect immunity and gate controllability [1]. However, the variability in electrical parameters including the drain current (Id) and transconductance (gm) has been observed in such ultra-scaled channel dimension down to 10 nm [2]. The diameter (dNW) of the channel region has also played...
The impact of PIDs on device yield was evaluated by detecting PIDs and performing a correlation analysis between the PID detection results and device yield of a probing test. It was consequently confirmed that PID can be detected sensitively with suitable wafer-surface inspection and SEM tools. It was also confirmed that PID correlates with device yield and that gate-dielectric defects are caused...
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