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Normally off Al2O3/GaN MOSFETs are fabricated with a tetramethylammonium hydroxide (TMAH) treatment as a postgate recess etch. The effects of the surface treatment on the etched GaN surface are investigated using low-frequency (1/$f$ ) noise and capacitance–voltage ($C$ –$V$ ) measurements. For a quantitative comparison with conventional devices, the oxide trap density ($N _{\mathbf {ot}}$ ) is...
In this paper, we introduce the cylindrical coordinate based flicker noise model for Silicon NanoWire Field Effect Transistor (Si-NWFET) with Gate-All-Around (GAA) structure. For the accurate extraction of the volume trap density, Nt, with 1/f noise modeling, the parameters which represent the intrinsic channel properties are determined by rejecting the series resistance Rsd effect. Due to the random...
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