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Quasi-ballistic transport in nanoscale high-k/metal gate nMOSFETs is investigated by RF S-parameter analysis. A simple experimental method based on RF S-parameter is used for direct extraction of device parameters (Leff, Cgc, RSD) and the effective carrier velocity (veff) from targeted short channel devices. The ballistic carrier velocity (vinj) at the top of the barrier near the source is determined...
In this paper, the C-V and I-V characteristics of Si-nanowire FET are presented. From the C-V data, the effects of undoped floating channel on the Si-nanowire FET are analyzed. Also, the intrinsic channel capacitance and mobility therein are extracted accurately by eliminating the effect of parasitic capacitances. Moreover, the I-V data free from the effect of the series resistance are obtained and...
In this letter, a new physical 1/f noise model is developed for double-stack high-k dielectric MOSFETs. This new model modifies the trapping-time-constant term in multistack unified noise model. Conventional 1/f noise model is built on the simple square potential approximation which did not account the electric field dependence on trapping time constant. The new model takes into account of a resultant...
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