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The high-power operation of the lateral single mode 638 nm AlGaInP laser diode was demonstrated. The stable operation up to 220 mW at 55degC was realized. This is the highest power record among the narrow stripe 638-nm LDs. This LD is suitable for micro-projector.
We designed a 1.06-mum single-quantum-well (SQW) InGaAs/AlGaAs planar tapered amplifier that was injected with seed light of a fiber Bragg grating stabilized laser diode through a fiber biconical microlens. To increase the amplifier output, the microlens with approximately 3- and 11-mum radii on vertical and horizontal axes, respectively, provides high coupling efficiency between the laser diode and...
Very tightly-focused ion beam was obtained by “Plasma Focus Diode” (PFD), yielding focusing diameter of ∼ 360 µm, and power density of ∼ 0.1 TW/cm2 at the beam energy of ∼ 1.5 MeV. Enhanced energy deposition was observed in the interaction with aluminium target with the enhancement ratio of ∼ 1.5. In comparison of the experimental data with 1-D hydrocode simulation, good agreement is obtained between...
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