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Cold-drawn pearlitic steel wires are widely used in numerous engineering fields. Combining X-ray line profile analysis and positron annihilation spectroscopy methods, up to 10 −5 –10 −4 vacancies were found in α-ferrite of a cold-drawn pearlitic steel wire with a true strain of ε=3. The formation of deformation-induced vacancies in α-ferrite of cold-drawn pearlitic steel wire was quantitatively...
GaN has shown great potential for high-power high-frequency electronic devices and short-wavelength optical devices. To integrate GaN-based optoelectronic devices with Si-based electronic devices and reduce the cost, it is desirable to grow epitaxial GaN thin films and device structures on the Si substrate. However, a proper buffer layer is essential for epitaxial growth of GaN films on Si substrate...
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