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Temperature-dependent electroluminescence from a double heterostructure n-Ge/i-Ge0.94Sn0.06/p-Ge LED was studied. The peak position of EL spectra showed a blue-shift as the temperature decreased. A maximum emission power of 7 mW was obtained under the current density of 800 A/cm2.
Room temperature electroluminescence (EL) from Ge/Ge0.92Sn0.08/Ge double heterostructure light-emitting diodes has been observed. Spectrum measurements show an emission peak at 0.601eV, which is attributed to direct bandgap transition.
The Ge/Ge0.94Sn0.06/Ge double heterostructure was grown on a Si substrate via chemical vapor deposition (CVD). The temperature and pump power-dependent photoluminescence (PL) were investigated and the enhanced direct transition at intense pump power was observed.
GeSn films were annealed in cycles of 30 s at 450 and 500 C. The annealing temperature and number of cycles for material quality enhancement and relaxation depends upon Sn mole fraction and film thickness.
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