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The Ge0.89Sn0.11 photoconductors with interdigitated electrodes have been investigated. High responsivity of 28.5 A/W and spectral response cutoff at 3.0 μm were achieved. The D∗ of 4.5 × 1010 cm·Hz1/2W−1 is close to that of extended-InGaAs detector.
We present double heterostructure GeSn edge emitting laser. The structure was grown on a Si substrate using a commercial chemical vapor deposition with GeH4 and SnCl4. The lasing threshold of 68 KW/cm2 at 10K and maximum laser operating temperature of 110 K was achieved.
SiGeSn/GeSn/SiGeSn quantum well was grown on Ge buffered Si substrate via chemical vapor deposition. Photoluminescence spectra were obtained using three excitation lasers, which could in-depth probe the optical transition characteristics of the quantum well.
GeSn-based optically pumped lasers and photoconductors have been systematically investigated. The operation wavelength of these devices covers 2–3 μm. Since GeSn technique is fully compatible with current CMOS process, the GeSn-based devices can be widely used in the area of Si integrated photonics.
A Ge0.95Sn0.05/Ge0.9Sn0.1/Ge0.95Sn0.05 single quantum well was grown on Si via chemical vapor deposition. Temperature-dependent Photoluminescence shows the emission peak from the GeSn well. The studied structure aims for group-IV based efficient light source on Si.
A double heterostructure Ge/Ge0.9Sn0.1/Ge photodiode detector grown on Si was systematically characterized. Temperature-dependent device performance has been investigated. A cutoff wavelength of 2.6 μm and the peak responsivity of 0.19 A/W at 300 K were achieved.
Characterizations of Ge/Ge0.9Sn0.1/Ge double heterostructure light-emitting diodes have been performed at the temperatures from 300 to 77K. The electroluminescence emission from the direct bandgap transition has been observed and systematically investigated.
Silicon-germanium-tin films were grown by an Epsilon® RPCVD single wafer CVD deposition system to be used as an intermediate cell in high efficiency multi-junction solar cells. Material and optical characterization of the samples are performed using transmission electron microscopy, X-ray diffraction, Rutherford backscattering, Raman spectroscopy, photoluminescence, and eillpsometry techniques. Thicknesses,...
The Ge0.9Sn0.1 photoconductor was fabricated with interdigitated structures on Si using a CMOS-compatible process. Temperature-dependent responsivity and specific detectivity were measured. The peak responsivity of 2.85A/W at 77K was achieved due to enhanced photoconductive gain.
Temperature-dependent electroluminescence from a double heterostructure n-Ge/i-Ge0.94Sn0.06/p-Ge LED was studied. The peak position of EL spectra showed a blue-shift as the temperature decreased. A maximum emission power of 7 mW was obtained under the current density of 800 A/cm2.
Characterization of GeSn edge-emitting LEDs has been conducted with Sn compositions up to 8%. Room temperature electroluminescence spectra and emission power were measured. A peak power of 50 mW was achieved with an 8%-Sn device.
The interdigitated electrodes were integrated on Ge0.93Sn0.07/Ge heterostructure photoconductive detectors. Photoresponse extending to 2.2 μm was achieved, and the enhanced responsivity with reduced spacing between interdigitated electrodes was observed at room temperature.
Room temperature electroluminescence (EL) from Ge/Ge0.92Sn0.08/Ge double heterostructure light-emitting diodes has been observed. Spectrum measurements show an emission peak at 0.601eV, which is attributed to direct bandgap transition.
The Ge/Ge0.94Sn0.06/Ge double heterostructure was grown on a Si substrate via chemical vapor deposition (CVD). The temperature and pump power-dependent photoluminescence (PL) were investigated and the enhanced direct transition at intense pump power was observed.
The Ge/Ge0.94Sn0.06/Ge double heterostructure, grown on a Si substrate was fabricated into a p-i-n photodiode. The dark I-V characteristics and 1.4–2.2 μm spectral response were measured for comparison with other on Si infrared detectors.
The spectral response and responsivity of a GeSn photoconductor were measured from 300 to 77 K. The maximum responsivity of 0.06 A/W was measured at 1550 nm for 10 volts bias at 140 K.
GeSn films were annealed in cycles of 30 s at 450 and 500 C. The annealing temperature and number of cycles for material quality enhancement and relaxation depends upon Sn mole fraction and film thickness.
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