The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
SiNx-doped Sb2Te3 films for nonvolatile memories were prepared by co-sputtering with Si3N4 and Sb2Te3 alloy targets. Electrical and structural properties were investigated and compared to those of conventional GST and pure Sb2Te3 film by annealing temperature-dependent resistivity measurement, x-ray diffraction (XRD). The resistivity ratio is larger than 105 during the phase transition, accompanied...
Impacts of annealing temperature and film thickness to the resistivity of Ge 2 Sb 2 Te 5 (GST) have been studied. The resistivity of GST drops when the annealing temperature reaches 180°C, rises above 360°C and the thicker film crystallized more easily. Electronic device of phase change memory also has been fabricated with metal sidewall technology using 5μm lithographic technology...
With the increasing requirement of high density memory technology, a new cell structure—1TR has received much attention. It consists of a single thin film transistor (TFT) with chalcogenide Ge 2 Sb 2 Te 5 as the channel material. In order to evaluate the feasibility of its application in the field of non-volatile memory, we take a further step in researching on the characteristics...
High writing current is the bottle-neck of PCM application and efforts focus on merely materials doping to improve crystal resistivity, novel structure to decrease active area etc. Here some solutions of our group are shown, including Si doped GST, novel 2D and 3D memory cell structure and multistate storage
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.