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Vapor-phase grown ZnO crystals were investigated by means of DLTS measurements. The generation of defect center E4 subsequent to annealing in different ambients was monitored. By conducting electron irradiations with energies, where either both the Zn- and O-sublattice are damaged or according to [1] only the Zn-lattice, a chemical assignment to the defect centers E4 and E3 could be accomplished....
As-grown ZnO bulk crystals and crystals annealed in vacuum, oxygen, or zinc vapour were characterized by electrical, optical and magnetic resonance spectroscopy. The experiments show that the residual carrier concentration is caused by residual H, Al, Ga and oxygen vacancies (VO) in the material. Annealing the samples in O2 at about 1000 °C (2 atm, 20 h) reduces the H and VO donor concentration by...
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