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It is shown that the STM can be used to measure the electrical conductance of surface states via tip-sample point contacts. In particular, the electrical conductance of the Si(111)7 7 surface is discussed. The experimental results indicate that the conductance consists of two components. One involves transport through the Schottky barrier formed at the interface while the other is sensitive to...
We have measured the tip-sample capacitance C and its dependence on the gap distance s for the first time on the clean Si(001)2 1 and Si(111)7 7 surfaces. The capacitance is found to vary linearly with logs for s > 100 nm while its divergence at smaller distances is markedly suppressed. No qualitative differences are found for C-log s curves obtained on the Si(001)2 1 and Si(111)7 7...
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