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Dielectric and MOS interface properties of SiO2 deposited with atomic layer deposition (ALD) on GaN with several surface treatment and oxide structures have been investigated via DC measurements. ALD SiO2 on dry etch + NaOH-treated GaN surface exhibited higher breakdown voltage with small distribution, larger barrier height characteristic, and higher charge to breakdown characteristics when compared...
A study of the physical phenomena leading to second breakdown of AlGaAs/InGaAs/GaAs power HEMTs in high voltage and high current conditions is presented. The boundary of the safe operating area (SOA) is measured in both DC and pulsed conditions. The effect of gate de-biasing and triggering of the parasitic bipolar transistor are identified as reasons for deterioration of the SOA. A model for these...
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