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Epitaxial thin films of the wide-band-gap chalcopyrite semiconductor CuGaS 2 have directly been grown on single crystalline Si substrates of (111) orientation. Structurally, the samples were characterized by means of reflection high energy electron diffraction, Rutherford backscattering spectroscopy, X-ray diffraction and transmission electron microscopy. The CuGaS 2 films crystallize...
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