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We have investigated the bandgap narrowing ΔE gSiGe of strained Si 1-x Ge x layers for 0.15<x<0.29. After MBE layer growth SiGe hetero bipolar transistors (HBTs) are processed by a minimal thermal budget technology to inhibit relaxation and to ensure sharp doping and Ge profiles. ΔE gSiGe is determined by electrical...
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