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In‐depth understanding of the generation and movement of ions inside all‐inorganic perovskite quantum dots (QDs) is crucial to achieve controllable and reliable resistive random access memory (RRAM). A novel photonic RRAM device based on solution‐processed perovskite quantum dots is proposed by Ye Zhou, Vellaisamy A. L. Roy, Su‐Ting Han, and co‐workers in article number 1800327. The synergistic effect...
The in‐depth understanding of ions' generation and movement inside all‐inorganic perovskite quantum dots (CsPbBr3 QDs), which may lead to a paradigm to break through the conventional von Neumann bottleneck, is strictly limited. Here, it is shown that formation and annihilation of metal conductive filaments and Br− ion vacancy filaments driven by an external electric field and light irradiation can...
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