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Thin films of alumina (Al 2 O 3 ) were deposited over Si 〈100〉 substrates at room temperature at an oxygen gas pressure of 0.03Pa and sputtering power of 60W using DC reactive magnetron sputtering. The composition of the as-deposited film was analyzed by X-ray photoelectron spectroscopy and the O/Al atomic ratio was found to be 1.72. The films were then annealed in vacuum to 350, 550...
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