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Stress effects during metal migration and their numerical modeling methods are reviewed. A multi-physics simulation method is proposed and developed so that the electric current and stress can be solved simultaneously and the vacancy concentration predicted in a seamless framework. The stress generated by atomic movement and back stress effects [1] have been especially considered and modeled in this...
In this paper, we report on 1.2kV SiC MOSFETs rated to Tj, max=200°C, exhibiting improved performance characteristics across operating temperature. Our devices show stable, rugged and reliable operation when subjected to industry standard qualification tests. Low on-resistance of 35mOhm/79mOhm at Tj=25°C and 47mOhm/103mOhms at Tj=150°C are shown for 0.1cm2 and 0.2cm2 die. 1000 hour High-Temperature...
Failures caused by the electromigration (EM) are becoming a primary reliability concern of integrated circuits and electronics packaging designers and manufacturers. In the foreseeable future, the trend of greater scale integration and further miniaturization in the microelectronics industry is expected to continue and this will make the metallization in electronics devices more susceptible to EM...
The mechanical and geometrical properties of hierarchically nano-structured random irregular honeycombs are obtained in this paper. All the possible deformation mechanisms: bending, stretching, transverse shear and hinging, are considered in the deformation analysis. The results show that if the size of the first order cell walls is at the nano-meter scale, the elastic and geometrical properties of...
The physical phenomenon electromigration (EM) and computer simulation methods of EM in microelectronics devices have been reviewed. A multi-physics EM simulation method which can be used to predict voids appearance in conductors has been described and its relevant challenges have been discussed. The optimizing methods for nano-packaging are discussed in this work and shunt structure for solder joint...
Negative bias temperature instability (NBTI) recovery for pure-SiO2 and plasma-nitrided oxide (PNO)-based PMOSFET has been investigated at room and below temperature. It is found that the generated hole traps in SiON dielectric under NBTI stress has a broadened energy distribution than that in SiO2 dielectric. This broadened maybe due to nitrogen related traps (K center) In SiON. The traps' location...
The effects of cadmium (Cd) stress with different periods on Cd accumulation and antioxidant enzyme activities in radish plants were investigated with hydroponic culture. Radish seedlings were treated with 50 mg-L-1 Cd2+ for periods of 0, 6, 12, 24, 48 and 96 h. The results showed that with the extension of Cd treatment, the Cd content in shoots and roots were increased, and most of the Cd accumulated...
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