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In this paper, we report on 1.2kV SiC MOSFETs rated to Tj, max=200°C, exhibiting improved performance characteristics across operating temperature. Our devices show stable, rugged and reliable operation when subjected to industry standard qualification tests. Low on-resistance of 35mOhm/79mOhm at Tj=25°C and 47mOhm/103mOhms at Tj=150°C are shown for 0.1cm2 and 0.2cm2 die. 1000 hour High-Temperature...
Negative bias temperature instability (NBTI) recovery for pure-SiO2 and plasma-nitrided oxide (PNO)-based PMOSFET has been investigated at room and below temperature. It is found that the generated hole traps in SiON dielectric under NBTI stress has a broadened energy distribution than that in SiO2 dielectric. This broadened maybe due to nitrogen related traps (K center) In SiON. The traps' location...
Negative Bias Temperature Instability (NBTI) is an important reliability problem in deep submicron PMOSFETs. In this paper, we review the recent literature on the possible theoretical foundations and experimental features of NBTI degradation. These features, including temperature activation energy, recovery and SILC under NBTI, actually reflect the different aspect of the same physics mechanism of...
Fast component of Vth instability in MOSFET with HfO 2 gate dielectric is systematically measured and characterized. A charge trapping/de-trapping model is used to simulate the Vth instability with overall agreement with the experiments. Experimental and modeling data provide and predict the fast Vth shift under both static and dynamic stress conditions. These data are incorporated into HSpice circuit...
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