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Stress effects during metal migration and their numerical modeling methods are reviewed. A multi-physics simulation method is proposed and developed so that the electric current and stress can be solved simultaneously and the vacancy concentration predicted in a seamless framework. The stress generated by atomic movement and back stress effects [1] have been especially considered and modeled in this...
Failures caused by the electromigration (EM) are becoming a primary reliability concern of integrated circuits and electronics packaging designers and manufacturers. In the foreseeable future, the trend of greater scale integration and further miniaturization in the microelectronics industry is expected to continue and this will make the metallization in electronics devices more susceptible to EM...
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