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This paper proposed a novel broadside-coupled meander-line resonator (BCMLR) for millimeter-wave (mm-wave) passive and active circuit designs. This on-chip resonator is designed and fabricated using a 0.13μm SiGe technology. The proposed BCMLR consists of two broadside-coupled meander lines with opposite orientation. Applying this resonator with on-chip capacitors, a compact first-order and a second-order...
Design of an inductor-less wideband variable-gain amplifier (VGA) using a cell-based strategy is presented. The VGA has a measured gain range of 24 dB, of which 17.3 dB is dB-linear with less than ±0.3 dB gain error. The −3 dB bandwidth is from 2 GHz to 2.2 GHz for the entire dB-linear range. An output 1 dB compression point of 1.8 dBm and a noise figure of 24 dB are measured. Due to the simple structure,...
We demonstrate a dual silicide integration on a SOI CMOS platform with robust low-resistance PtSi PMOS contacts. Compared to NiSi, the specific contact resistivity is reduced in PtSi contacts to p-type Si and increased in contacts to n-type Si. PMOS linear and saturation drive current enhancements of 6% and 9%, respectively, were achieved with PtSi relative to baseline NiSi source/drain contacts.
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