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Magneto-transport results obtained for the strained 100nm thick Hg1−x CdxTe (x=0.135) layer grown by MBE on the CdTe/GaAs substrate are interpreted by the 8×8 kp model with the in-plane tensile strain. The dispersion relation for the investigated structure proves that the Dirac point is located in the gap caused by the strain. It is also shown that the fan of the Landau Levels (LL's) energy calculated...
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