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Semi-insulating (100) GaAs single crystalline substrates have been doubly Al + -implanted using ion beams of the 250keV energy and the fluence F=3.5×10 16 cm −2 , and 100keV with F=9.6×10 15 cm −2 at six target temperatures ranging from 250 to 500°C. The radiation damage introduced by such “hot implantation” was subsequently investigated by Rutherford Backscattering...
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