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Silicon on insulator (SOI) structures (Si / SiO 2 layer / Si) were prepared by bonding the oxidised Si wafer with the hydrogen implanted one and a cleavage of the last wafer by the Smart Cut technique. Effect of high temperature and hydrostatic pressure (HT-HP) treatment at temperatures up to 1570 K and pressure up to 1.2 GPa, typically for 5 h, on the SOI structures was investigated by Transmission...
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