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The review of electromodulation techniques such as photo- and electroreflectance spectroscopy is presented and illustrated using spectra of AlGaN/GaN heterostructures. By using these techniques it is possible to analyze the Franz-Keldysh oscillations to obtain the value of electric field near the surface or at interface. When additionally a constant voltage is applied to the structure, it is possible...
GaN/AlGaN photodetector that exhibits new interesting property is presented. Its spectral sensitivity depends upon bias voltage. Under positive or low negative bias the detector is sensitive mainly to the ultrafiolet radiation absorbed by AlGaN layer 3.7-3.8 eV. Under negative bias U_B below -4 V, the detector is sensitive mainly to the radiation absorbed by GaN (3.4-3.6 eV). The effect can be explained...
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