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A novel waffle-type nLDMOS-SCR ESD clamp with compact source and drain for high-voltage ESD protection is proposed and realised using the 0.35 μm, 30/5 V bipolar-CMOS-DMOS (BCD) process. With this new structure, a high ESD failure current of 4.4 A was achieved with a total channel width of only 60 μm. Considering the area efficiency, the waffle-type structure provides more than 30 higher current handling...
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