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We report on the demonstration of enhancement-mode n-channel GaN high-voltage metal-oxide field-effect transistor (MOSFET) realized on both p and n GaN epilayer on sapphire substrates. These MOSFETs, with different gate geometries, shows good DC characteristics with world-best field-effect mobility of 167 cm2/V-s and maximum blocking voltage of 940 V
We report on the demonstration of enhancement-mode n-channel GaN high-voltage MOSFET realized on both p and n-GaN epilayer on sapphire substrates. These MOSFETs, with linear and circular gate geometries, show good dc characteristics with maximum field-effect mobility of 167 cm2/Vmiddots, best reported to date
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