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The exposure of HfN thin films sputter-deposited on silicon-substrate to the irradiation with carbon ions of moderate energy (E=100 and 150 keV) and different fluences resulted in a relaxation of compressive internal stresses (from −5 to −4 GPa). The stress-reduction has been confirmed by measurements of the substrate deflection and X-ray diffraction method. The structural changes induced in the ion...
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