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A novel construction of an ion source with an evaporator placed inside a plasma chamber is presented. The crucible is heated to high temperatures directly by arc discharge, which makes the ion source suitable for substances with high melting points. The compact ion source enables production of intense ion beams for wide spectrum of solid elements with typical separated beam currents of ∼100–150μA...
Zaprezentowany jest model numeryczny ekstrakcji jonów ujemnych wytworzonych dzięki jonizacji powierzchniowej. Do obliczania rozkładu gęstości wykorzystano metodę Particle-In-Cell. Model umożliwia przeprowadzanie symulacji dla różnych konfiguracji układu ekstrakcyjnego, gęstości i temperatury plazmy. Przedstawiono wstępne wyniki symulacji: ewolucję potencjału plazmy, zależność potencjału plazmy od...
Silicon is an important semiconductor substrate for manufacturing solar cells. The mechanical and electrical properties of multi-crystalline silicon (mc-Si) are primarily influenced by the quality of the feedstock material and the crystallization process. In this work, numerical calculations, applying finite element analysis (FEA) and finite volume methods (FVM) are presented, in order to predict...
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