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Composite layers formed in SiO2 by implantation of 50‐keV Cu+ ions with a dose of 8·1016 cm−2 at an ion current density of 10 μA/cm2 have been investigated. It is shown that ion implantation carried out under the chosen conditions allows one to synthesize copper nanoparticles in the surface region of a dielectric. The exposure of composites to high‐power pulses of an excimer krypton laser at a wavelength...
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