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W artykule przedstawiono model tranzystora MESFET ze względu na analizę produktów intermodulacyjnych (IMD) wzmacniacza mikrofalowego. Omówiono sposób linearyzacji elementu aktywnego wykorzystujący metodę superpozycji pochodnej w zastosowaniu do tranzystorów MESFET tego samego typu. Zaprezentowano rozwiązanie układowe niskoszumnego wzmacniacza mikrofalowego o dużej liniowości oraz jego charakterystyki...
A procedure for active element linearization via derivative superposition used for MESFET transistors is discussed in the paper. A method for description of transient characteristics of microwave field MESFET transistors, other than classic one, is presented. A solutions of a circuit for a microwave amplifier of high linearity and its characteristics obtained via simulation are also shown.
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