The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In this work results are presented of the electrical and photoelectric measurements of MOS capacitors, consisting of an Al gate of thickness 25 nm, SiO2 insulator of thickness 60 nm, and n-doped 3C-SiC. Many different measurement techniques are employed in order to completely define all parameters of the band diagram of the MOS structure, which is the main goal of these investigations.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.