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In the paper a new nonlinear compact thermal model of power MOS transistors based on the Cauer network is proposed. The analytical description of the model and the method of the model parameter estimation are presented. The accuracy and usefulness of the model is verified experimentally for the trench MOS transistor MTD20N06V at its various cooling conditions.
This paper concerns the problem of SPICE modeling of the class of silicon-carbide MPS diodes with thermal effects (self-heating) taken into account. In the paper the SPICE electrothermal model by Infineon Technologies of SiC MPS diodes is considered and described in detail. The model is verified experimentally by comparing the calculated and measured device characteristics. The simple modification...
In the paper the isothermal model of TrenchMOSFETs offered by the producer of these devices and the electrothermal model of these devices proposed by the authors were presented. The results of the experimental verification of both the models are given as well.
In this paper some results of measurements of the dc characteristics of the power MOSFET IRF840 are presented. These characteristics were measured for ideal and real cooling conditions. The influence of selfheating on the output and transfer characteristics of the investigated device are shown and discussed.
In the paper a computer-aided method of measuring of the transient thermal impedance of MESFETs is presented. The advantages of this method are illustrated by means of measurements of the gallium arsenide MESFET operating at the different cooling conditions.
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