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GaN-based metal-insulator-semiconductor (MIS) two-dimensional electron gas ultraviolet (UV) photodetectors with sputtered SiO2 insulation and passivation layers were fabricated. With a 5 V applied bias and 35 mW deuterium lamp irradiation, it was found that the photocurrent to dark current contrast ratio was 2.1 104 for the MIS photodetector with passivation. It was also found that UV to visible rejection...
The growth of quaternary AlInGaN epitaxial layer on GaN/sapphire substrates by metalorganic chemical vapour deposition is reported. It was found that AlInGaN layers were grown three dimensionally with rough surface at low temperatures and transferred to smooth two-dimensional growth at 860degC. It was also found that In mole fraction in the layers decreased significantly as the AlInGaN growth temperature...
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