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Long-channel In0.7Ga0.3As/In0.52Al0.48As quantum-well (QW) metal-oxide-semiconductor field-effect-transistors (MOSFETs) on InP substrate have been fabricated and characterised. The fabricated device with Lg = 4 μm exhibits excellent maximum transconductance (gm_max) in excess of 0.48 mS/μm at VDS = 0.95 V, together with reasonably good electrostatic integrity of drain-induced-barrier-lowering <...
High-frequency characteristics of Lg = 60 nm In0.7Ga0.3As MOS-high-electron-mobility transistor (HEMTs) with a 3 nm aluminium oxide grown by atomic-layer-deposition is reported. Fabricated In0.7Ga0.3As MOS-HEMTs with Lg = 60 nm exhibit subthreshold-swing (SS) = 89 mV/dec., drain-induced-barrier-lowering = 98 mV/V, gm_max = 1.1 mS/μm, fT = 187 GHz and fmax = 202 GHz at VDS = 0.5 V. The high-frequency...
A hybrid laser diode consisted of Si slab waveguide and III-V ridge waveguide has been investigated. This structure is efficient for enhancing the confinement factors in the silicon region and the III-V active region simultaneously.
We report on the incorporation of thin organic layers as part of GaN/InGaN blue light emitting diodes. The integration of two such contrasting classes of materials as electronic part of a single device structure may offer new opportunities in the design of flexible optoelectronic devices.
When the n=1 (ground) state of quantum dots is resonantly pumped, a "non-degenerate" biexciton composed of an n=1 and n=2 (excited) states-pair may be observed with pump-probe spectroscopy. We observed this resonance and measured 15-meV binding energy in In0.4Ga 0.6As self-organized quantum dots, consistent with theoretical calculations
Summary form only given. We have successfully demonstrated an improved nonbiased optical bistability in an GaAs-AlGaAs QW electroabsorption modulator by utilizing nonresonant p-i-n-i-p structure, which has large E while maintaining sufficient light absorption with no external bias.
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