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Electronic structure of Cr, Mn, Fe, and Co transition metal (TM) ions in GaN and AlN is studied within the Generalized Gradient Approximation augmented by the +U corrections, which are treated as free parameters. The main impact of U(N) is the opening of the band gap by shifting both valence and conduction band energies. The intracenter transitions between the gap states of TM impurities are weakly...
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