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Luminescence investigations of ZnO films covered by Ag films using different pumping sources revealed thatinfluence of Ag films on the intensity of ZnO films luminescence depends on excitation conditions and Ag covering quality.
A native alumina thin film existing on aluminium and its evolution in thermosonic gold wire bonding were characterized using high resolution transmission electron microscopy (HR TEM). It has been found that the partly fracture of this alumina film by the ultrasonic vibration allows the interdiffusion at the Au/Al interface, such that the intermetallic compounds (IMCs) are formed. The IMCs are identified...
Cu metallization has been widely applied in back-end-of-line (BEOL) of integrated circuit fabrication, as well as in advanced packaging such as 3-D interconnects and through silicon via (TSV). As the device feature size further shrinks copper diffusion barrier layers with high conductivity, good thermal stability and low Cu diffusion coefficient are to be developed. Amorphous metal alloy films of...
A new SOI high-voltage device with a step thickness sustained voltage layer (ST SOI) is proposed. The electric field in the drift region is modulated, and that in the buried layer is enhanced by the variable-thickness SOI layer, resulting in enhancement of breakdown voltage (BV). BV for the ST SOI with two steps is twice as high as that of the conventional SOI, maintaining the low on-resistance (R...
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