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The basic device characterization of (λ-9.4 μm) GaAs-based quantum cascade lasers (QCLs) operating up to 260 K is reported. The laser design followed an "anticrossed-diagonal" scheme. The QCL structures were grown by MBE, with Riber Compact 21T reactor. The influence of injector doping on electrical and optical properties of the lasers has been clarified.
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